power transistors 1 2sb0941, 2sb0941a 2sb0941, 2sb0941a 2sb0941, 2sb0941a 2sb0941, 2sb0941a 2sb0941, 2sb0941a silicon pnp epitaxial planar type for low-frequency power amplification complementary to 2sd1266 and 2sd1266a features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector to emitter saturation voltage v ce(sat) ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sb0941 v cbo ? 60 v voltage 2sb0941a ? 80 collector to 2sb0941 v ceo ? 60 v emitter voltage 2sb0941a ? 80 emitter to base voltage v ebo ? 5v peak collector current i cp ? 5a collector current i c ? 3a collector power t c = 25 cp c 35 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff 2sb0941 i ces v ce = ? 60 v, v be = 0 ? 200 a current 2sb0941a v ce = ? 80 v, v be = 0 ? 200 collector cutoff 2sb0941 i ceo v ce = ? 30 v, i b = 0 ? 300 a current 2sb0941a v ce = ? 60 v, i b = 0 ? 300 emitter cutoff current i ebo v eb = ? 5 v, i c = 0 ? 1ma collector to emitter 2sb0941 v ceo i c = ? 30 ma, i b = 0 ? 60 v voltage 2sb0941a ? 80 forward current transfer ratio h fe1 * v ce = ? 4 v, i c = ? 1 a 70 250 h fe2 v ce = ? 4 v, i c = ? 3 a 10 base to emitter voltage v be v ce = ? 4 v, i c = ? 3 a ? 1.8 v collector to emitter saturation voltage v ce(sat) i c = ? 3 a, i b = ? 0.375 a ? 1.2 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = ? 1 a, i b1 = ? 0.1 a, i b2 = 0.1 a 0.5 s storage time t stg 1.2 s fall time t f 0.3 s rank q p h fe1 70 to 150 120 to 250 ordering can be made by the common rank (pq rank h fe1 = 70 to 250) in the rank classification. 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 1 : base 2 : collector 3 : emitter eiaj : sc-67 to-220f package note) * : rank classification
power transistors 2 v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be area of safe operation (aso) r th(t) ? t 2sb0941, 2sb0941a 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (4) (3) (2) ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 0 10 8 2 6 4 0 6 5 4 3 2 1 t c =25 ? c 80ma 60ma 40ma 30ma 20ma 12ma 8ma 4ma 16ma i b = 100ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 2.0 1.6 0.4 1.2 0.8 0 10 8 6 4 2 t c =100 ? c 25 ? c v ce = 4v 25 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce = 4v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce = 5v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 10ms t=1ms i cp i c 2sb0941a 2sb0941 non repetitive pulse t c =25 ? c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 10 2 10 1 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ? c/w )
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